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| WTA8921 PNP Silicon Transistors COLLECTOR * "G" Lead(Pb)-Free BASE 3 1 SOT-23 EMITTER 2 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R JA TJ, Tstg Value 200 1.6 625 -55 to +150 Unit mW mW/ C C/W C Device Marking WTA8921=IO, IY ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -1 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -1 uAdc, IC=0) Collector Cutoff Current (VCB= -30Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0 Vdc, I C=0) 1. FR-5=1.0 I I 0.75 I I 0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -30 -35 -5.0 Max -1.0 -1.0 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw WTA8921 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -1 Vdc) (IC= -800 mAdc, VCE= -1 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -20mAdc) Output Capacitance (VCB =-10Vdc, I E =0, f=1MHZ) Transition Frequency (IC= -10mAdc, VCE=-5 Vdc, f=30MHz) hFE (1) hFE (2) VCE(sat) 100 40 320 -0.4 Vdc PF Cob fT 80 2.0 - - MHz CLASSIFICATION OF hFE (1) Rank Range O 100-200 Y 160-320 WEITRON http://www.weitron.com.tw WTA8921 FIG.1 FIG.2 FIG.3 FIG.4 FIG.5 http://www.weitron.com.tw WEITRON WTA8921 SOT-23 Package Outline Dimensions A Unit:mm TOP VIEW B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 http://www.weitron.com.tw WEITRON |
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